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IXFK 200N10P
IXFX 200N10P
TO-264 (IXFK) Outline
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
R G = 3.3 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
TO-264 and PLUS247
60
97
7600
2900
860
30
35
150
90
235
50
135
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18 ° C/W
° C/W
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
200
400
1.5
A
A
V
t rr
I F = 25 A, dI/dt = 100 A/ μ s
150 ns
Q RM
I RM
V R = 50 V, V GS = 0 V
0.4
6
μ C
A
PLUS 247 TM (IXFX) Outline
Dim.
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
Terminals: 1 - Gate
2 - Drain (Collector)
R
4.32 4.83
.170 .190
3 - Source (Emitter)
4 - Drain (Collector)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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